Electrical properties of MIS devices on CdZnTe/HgCdTe

Tae-Seok Lee; Y. T. Jeoung; Hyun Kyu Kim; Jae Mook Kim; Jinhan Song; S. Y. Ann; Ji Young Lee; Young Hun Kim; Sun-Ung Kim; Mann-Jang Park; S. D. Lee; Sang-Hee Suh

doi:10.1117/12.328083

26 October 1998 Electrical properties of MIS devices on CdZnTe/HgCdTe

Tae-Seok Lee, Y. T. Jeoung, Hyun Kyu Kim, Jae Mook Kim, Jinhan Song, S. Y. Ann, Ji Young Lee, Young Hun Kim, Sun-Ung Kim, Mann-Jang Park, S. D. Lee, Sang-Hee Suh

Author Affiliations +

Proceedings Volume 3436, Infrared Technology and Applications XXIV; (1998) https://doi.org/10.1117/12.328083
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

In this paper, we report the capacitance-voltage (C-V) properties of metal-insulator-semiconductor (MIS) devices on CdTe/HgCdTe by the metalorganic chemical vapor deposition (MOCVD) and CdZnTe/HgCdTe by thermal evaporation. In MOCVD, CdTe layers are directly grown on HgCdTe using the metal organic sources of DMCd and DiPTe. HgCdTe layers are converted to n-type and the carrier concentration, N_D is low 10¹⁵ cm^-3 after Hg-vacancy annealing at 260 degrees Celsius. In thermal evaporation, CdZnTe passivation layers were deposited on HgCdTe surfaces after the surfaces were etched with 0.5 - 2.0% bromine in methanol solution. To investigate the electrical properties of the MIS devices, the C-V measurement is conducted at 80 K and 1 MHz. C-V curve of MIS devices on CdTe/HgCdTe by MOCVD has shown nearly flat band condition and large hysteresis, which is inferred to result from many defects in CdTe layer induced during Hg-vacancy annealing process. A negative flat band voltage (V_FB approximately equals -2 V) and a small hysteresis have been observed for MIS devices on CdZnTe/HgCdTe by thermal evaporation. It is inferred that the negative flat band voltage results from residual Te⁴⁺ on the surface after etching with bromine in methanol solution.

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Tae-Seok Lee, Y. T. Jeoung, Hyun Kyu Kim, Jae Mook Kim, Jinhan Song, S. Y. Ann, Ji Young Lee, Young Hun Kim, Sun-Ung Kim, Mann-Jang Park, S. D. Lee, and Sang-Hee Suh "Electrical properties of MIS devices on CdZnTe/HgCdTe", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328083

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