Electron mobility modeling in HgCdTe

Sang Dong Yoo; Nam Hong Jo; B. G. Ko; Jae Seup Rho; S. D. Lee; Kae Dal Kwack

doi:10.1117/12.328052

26 October 1998 Electron mobility modeling in HgCdTe

Sang Dong Yoo, Nam Hong Jo, B. G. Ko, Jae Seup Rho, S. D. Lee, Kae Dal Kwack

Proceedings Volume 3436, Infrared Technology and Applications XXIV; (1998) https://doi.org/10.1117/12.328052
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

As HgCdTe technology has been advanced, HgCdTe photodetectors is realized in many application areas. Carrier mobility is one of the most fundamental parameters affecting current-voltage characteristics of the devices. In the conventional simulations the empirical mobility model is used which lacks generality. Especially, the field dependent mobility is found to be wrong by comparing Monte Carlo results. The semi- empirical electron mobility model for the simulator is proposed in this paper. Low field mobility is calculated using the relaxation time approximation, which provides information on the dominant factors affecting the mobility. The ionized impurity model is modified based on Brooks-Herring model to consider the degeneracy effect and overlap integral. For field dependent mobility, a new formula is proposed to take into account features of the dominant scattering mechanism such as nonparabolic relation between energy and wave function at high field. Final formula is accomplished by introducing fitting parameters extracted from Monte Carlo simulation results. The new model retains more physical meaning than conventional model and fits well with experimental data.

Citation Download Citation

Sang Dong Yoo, Nam Hong Jo, B. G. Ko, Jae Seup Rho, S. D. Lee, and Kae Dal Kwack "Electron mobility modeling in HgCdTe", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328052

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