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26 October 1998 New infrared and other applications of narrow-gap semiconductors
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Abstract
The use of multilayer heterostructures based on the narrow-gap semiconductor materials InSb/InAlSb and HgCdTe is leading to a range of IR and other devices which can operate without cooling. Work in DERA will be reviewed which has demonstrated uncooled detectors out to 12 micrometer; uncooled infrared LEDs for the 3 - 12 micrometer region, employing either positive or negative luminescence; diode injection lasers with output between 3.9 micrometer and 5.1 micrometer (operating up to 150 k); and uncooled very high speed, very low voltage transistors.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles Thomas Elliott "New infrared and other applications of narrow-gap semiconductors", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328075
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