Single-element photoconductive Hg0.79Cd0.21Te IR detector fabrications and their characteristics

TaeHoon Kim; Myung-Soo Han; Min-Suk Jeoung; J. H. Kwon; Nam-Su Yim; Gyumg Suk Lee; Eui-Tae Kim; Suk-Ryong Hahn; H. C. Kwon; Y. Bin; Y. T. Jeoung; Jae Mook Kim

doi:10.1117/12.328003

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26 October 1998 Single-element photoconductive Hg_0.79Cd_0.21Te IR detector fabrications and their characteristics

TaeHoon Kim, Myung-Soo Han, Min-Suk Jeoung, J. H. Kwon, Nam-Su Yim, Gyumg Suk Lee, Eui-Tae Kim, Suk-Ryong Hahn, H. C. Kwon, Y. Bin, Y. T. Jeoung, Jae Mook Kim

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Proceedings Volume 3436, Infrared Technology and Applications XXIV; (1998) https://doi.org/10.1117/12.328003
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

Long wavelength infrared (LWIR) photoconductive (PC) detectors of single element Hg_0.79Cd_0.21Te (MCT) on sapphire substrate were fabricated, using three kinds of MCT etching processes, such as wet only, wet & dry mixed, and dry only process. The ohmic contact metals, which were used to the first contact layer in the IR detector fabrication, were Au, Ni, and Ti. The performance test of the fabricated IR detectors showed the good results in the wet etched MCT IR detectors with the detectivities (D*) of (1-3) X 10¹⁰ cmHz^1/2W^-1 and the responsivities of (2-3) X 10⁴ VW^-1 at field of view (FOV) of 180 degrees.

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TaeHoon Kim, Myung-Soo Han, Min-Suk Jeoung, J. H. Kwon, Nam-Su Yim, Gyumg Suk Lee, Eui-Tae Kim, Suk-Ryong Hahn, H. C. Kwon, Y. Bin, Y. T. Jeoung, and Jae Mook Kim "Single-element photoconductive Hg_0.79Cd_0.21Te IR detector fabrications and their characteristics", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328003

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