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26 October 1998 Single-element photoconductive Hg0.79Cd0.21Te IR detector fabrications and their characteristics
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Long wavelength infrared (LWIR) photoconductive (PC) detectors of single element Hg0.79Cd0.21Te (MCT) on sapphire substrate were fabricated, using three kinds of MCT etching processes, such as wet only, wet & dry mixed, and dry only process. The ohmic contact metals, which were used to the first contact layer in the IR detector fabrication, were Au, Ni, and Ti. The performance test of the fabricated IR detectors showed the good results in the wet etched MCT IR detectors with the detectivities (D*) of (1-3) X 1010 cmHz1/2W-1 and the responsivities of (2-3) X 104 VW-1 at field of view (FOV) of 180 degrees.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
TaeHoon Kim, Myung-Soo Han, Min-Suk Jeoung, J. H. Kwon, Nam-Su Yim, Gyumg Suk Lee, Eui-Tae Kim, Suk-Ryong Hahn, H. C. Kwon, Y. Bin, Y. T. Jeoung, and Jae Mook Kim "Single-element photoconductive Hg0.79Cd0.21Te IR detector fabrications and their characteristics", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998);

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