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1 July 1998 X-ray imaging with semiconductor films
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In this paper, a novel approach for developing a large area, high spatial resolution x-ray imaging detector is discussed. This approach integrates the flat panel amorphous silicon readout technology with the polycrystalline lead iodide photoconductive x-ray detection technology. This Pbl2 detector design is promising because it provides high x-ray stopping efficiency, high efficiency conversion of x-ray energy into electronic change, high signal amplitude due to efficient collection of these changes, and high spatial resolution due to electro-static focusing of these changes. We have designed and fabricated prototype 2' X 2' imagers with 200 micrometers pixels (256 X 256 elements) using this approach. The performance of these imagers is characterized by measuring their dark current, x-ray induced signal amplitude, spatial resolution, and uniformity of response. Some basic properties of lead iodide films are also evaluated and presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kanai S. Shah, Paul R. Bennett, Leonard J. Cirignano, Yuriy N. Dmitriyev, Mikhail B. Klugerman, Krishna C. Mandal, Larry P. Moy, and Robert A. Street "X-ray imaging with semiconductor films", Proc. SPIE 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications, (1 July 1998);


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