Light emission in silicon-germanium at 1.54 um using erbium luminescence

Md. Quamrul Huda; A. R. Peaker

doi:10.1117/12.331138

13 November 1998 Light emission in silicon-germanium at 1.54 μm using erbium luminescence

Md. Quamrul Huda, A. R. Peaker

Proceedings Volume 3465, Millimeter and Submillimeter Waves IV; (1998) https://doi.org/10.1117/12.331138
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

The rare earth element erbium has been incorporated in silicon-germanium strained quantum well structures by ion implantation. A dopant concentration of 10¹⁸/cm³ was obtained through the process of amorphization and solid phase epitaxial regrowth. The incorporated erbium atoms were found to be electronically active producing luminescence at 1.54 micrometer from the characteristic ⁴I_13/2 yields ⁴I_15/2 transition. Photoluminescence spectra of the specimens were found to be entirely dominated by atomically sharp, strong erbium signal without any contribution from band-edge or quantum well emission. The erbium luminescence was found to be temperature dependent, reducing exponentially with temperature with an activation energy of 120 meV. This energy was shown to correspond to the position of the erbium related level from the conduction band.

Citation Download Citation

Md. Quamrul Huda and A. R. Peaker "Light emission in silicon-germanium at 1.54 μm using erbium luminescence", Proc. SPIE 3465, Millimeter and Submillimeter Waves IV, (13 November 1998); https://doi.org/10.1117/12.331138

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