Trap-emptying time in LT CdTe films determined by time-resolved reflectance near Brewster's angle

Nicolas Breuil; Anne Ghis; A. Reineix; Bernard Jecko; Alain Barthelemy

doi:10.1117/12.331185

13 November 1998 Trap-emptying time in LT CdTe films determined by time-resolved reflectance near Brewster's angle

Nicolas Breuil, Anne Ghis, A. Reineix, Bernard Jecko, Alain Barthelemy

Proceedings Volume 3465, Millimeter and Submillimeter Waves IV; (1998) https://doi.org/10.1117/12.331185
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

We have characterized the dynamic of carriers in photoconductors which are already located in microwave devices. We particularly examined the trapping time and trap emptying time of Low Temperature grown CdTe. A trapping time of 1.6 ps was found from both optoelectronic cross correlation and Time Resolved Reflectance measurements. Trap emptying time is usually investigated by pump and probe optical transmission technique that gives the dynamic of non linear absorption. We have used instead a new method called Time Resolved Reflectance Close to Brewster's Angle in order to study non linear absorption occurring in photoconductive material already processed in microwave structure. We developed a model to estimate the trap emptying time of LT CdTe. We found a trap emptying time of 0.58 ps which is lower than the trap time 1.6 ps. These parameters make CdTe a good candidate to optical/microwave conversion in high bit rate communications or as a sampling gate in a sample and hold circuits.

Citation Download Citation

Nicolas Breuil, Anne Ghis, A. Reineix, Bernard Jecko, and Alain Barthelemy "Trap-emptying time in LT CdTe films determined by time-resolved reflectance near Brewster's angle", Proc. SPIE 3465, Millimeter and Submillimeter Waves IV, (13 November 1998); https://doi.org/10.1117/12.331185

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