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16 October 1998 Nonlinear optical probes of nanoscale devices
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New developments in the semiconductor industry are driven by two trends: reducing the device dimensions and further increase of the switching speeds or electrical bandwidths. The electronics industry average feature sizes of integrated circuits (ICs) will be of the order of 100 nm by the year 2010. For instance, currently produced MOS field-effect transistors support electrical fields between the source and the drain that are greater than 105 V/micrometer with switching speeds of 10 - 100 psec. Techniques which would resolve such electrical fields, with the appropriate resolutions in time and in space, are of paramount interest both at the industrial level and in basic research. Initial experiments performed on samples consisting of two metallic electrodes deposited on fused silica substrates covered by thin polymer films show that with only 1 (mu) W of average optical power, a second harmonic signal triggered by an AC/DC field could easily be detected with a spatial resolution of less than 1 micrometer. We anticipate electrical field detection sensitivity of less than 1 mV/micrometer with our technique with 100 nm resolution spatially and less than 1 psec resolution in time.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keith Meyers, William Eugene Torruellas, Akira Otomo, Shinjo Mashiko, and Pajo Vujkovic-Cvijin "Nonlinear optical probes of nanoscale devices", Proc. SPIE 3473, Third-Order Nonlinear Optical Materials, (16 October 1998);

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