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16 December 1998 Charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes
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Abstract
We have investigated the hole injection characteristics from indium tin oxide (ITO) into 4,4',4''-tris[N,-(3- methylphenyl)-N-phenylamino] triphenylamine (m-MTDATA) and have measured the hole carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge- limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal ohmic contact at high electric fields. The drift mobility of the m-MTDATA molecular glass was found to be electric field dependent and a negative field dependence was detected at fields lower than 1 by 105 V/cm. Our observations clarify the role of m-MTDATA as a voltage- lowering hole-injecting buffer layer in organic light- emitting diodes.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Homer Antoniadis, Carsten Giebeler, Donal D. C. Bradley, and Yasuhiko Shirota "Charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes", Proc. SPIE 3476, Organic Light-Emitting Materials and Devices II, (16 December 1998); https://doi.org/10.1117/12.332607
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