Changes of Tc under epitaxial strain: implications for the mechanism of superconductivity

Jean-Pierre Locquet; Joel Perret; Jeongwoo Seo; J. Fompeyrine

doi:10.1117/12.335885

22 December 1998 Changes of T_c under epitaxial strain: implications for the mechanism of superconductivity

Jean-Pierre Locquet, Joel Perret, Jeongwoo Seo, J. Fompeyrine

Proceedings Volume 3481, Superconducting and Related Oxides: Physics and Nanoengineering III; (1998) https://doi.org/10.1117/12.335885
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

Recent results showed that a relationship exists between a large modulation of the critical temperature and small variations in the lattice parameters for strontium-doped La₂CuO₄ '214' thin films grown by molecular beam epitaxy under compressive or tensile strain. In this paper we search for the subtle deviation of the atom positions responsible for the observed behavior. We compare our findings regarding charge transfer, anisotropy, in-plane resistivity, and superfluid density with trends observed among the family of the one-CuO₂-layer compounds. This systematics leads us to the following conclusions: (1) increasing the distance between the charge reservoir and the CuO₂ plane is essential to increase T_c, (2) the electrical coupling from one CuO₂ plane to the next CuO₂ plane may not be essential for the mechanism, (3) a sufficient density of carriers is present in the underdoped state but the appearance of superconductivity is hindered by a large scattering rate, and (4) this scattering rate is determined by the two-dimensional confinement of the carriers in the CuO₂ planes.

Citation Download Citation

Jean-Pierre Locquet, Joel Perret, Jeongwoo Seo, and J. Fompeyrine "Changes of T_c under epitaxial strain: implications for the mechanism of superconductivity", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335885

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