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23 September 1998Domain switch in silicon-nematic-ITO structure
The nonlinear electrooptic effect in the silicon substrate- nematic-ITO structure is described. It is supposed that a domain switching of a director is induced by a local accumulation and spreading of injected charge within a nematic layer. The exciting centers of a domain can be the defects of silicon surface and the laser irradiation.
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Ivanovich Mikhola Gritsenko, Sergey Ivanovich Kucheev, "Domain switch in silicon-nematic-ITO structure," Proc. SPIE 3488, Nonlinear Optics of Liquid and Photorefractive Crystals II, (23 September 1998); https://doi.org/10.1117/12.323723