Paper
4 December 1998 Broadband impedance-matched metal-semiconductor-metal photodetector arrays
Ray G. DeCorby, Alan J. P. Hnatiw, Dave W. Boertjes, James N. McMullin, R. Ian MacDonald
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Abstract
An electrically interconnected, linear array of photodetectors is a useful component for several optoelectronic systems applications. Traveling-wave concepts were employed in matching arrays of metal-semiconductor- metal photodetectors to a 50 (Omega) load, over a broad bandwidth. The photodetectors are embedded in a microstrip transmission line, to form a periodically loaded structure. The bias of each detector is independently controllable. Such periodic structures can be designed to exhibit specified characteristic impedance, and to be non-dispersive up to very high frequencies. With proper matching, each photodetector exhibits broadband response into an external load. Experimentally, a monolithic array of eight metal- semiconductor-metal photodetectors, attached to a microstrip bus, is shown to have uniform 12 GHz bandwidth. A model for the array is discussed, and theoretical and experimental results are in good agreement. Applications of broadband photodetector arrays are also discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ray G. DeCorby, Alan J. P. Hnatiw, Dave W. Boertjes, James N. McMullin, and R. Ian MacDonald "Broadband impedance-matched metal-semiconductor-metal photodetector arrays", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328753
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Cited by 1 scholarly publication and 2 patents.
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KEYWORDS
Photodetectors

Sensors

Capacitance

Capacitors

Optoelectronics

Cadmium

Inductance

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