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4 December 1998 High-speed 4x4 optoelectronic switch with on-chip optical signal distribution
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In this paper, a high-speed 4 X 4 optoelectronic switch with on-chip optical signal distribution is presented. The switching matrix integrates both metal-semiconductor-metal photodetectors and polyimide waveguides onto a monolithic structure. The bias-switched photodetectors are used to select which incident optical signals are to be detected and converted to electrical signals for distribution. The polyimide waveguides provide on-wafer distribution of the input optical signals to the detectors. This switch had an isolation of less than 48 dB at 1.0 GHz, a crosstalk of greater than -26 dB at 0.8 GHz, and a bandwidth between 4.3 to 6.5 GHz depending on the particular crosspoint being measured. This optoelectronic switch shows improved performance over a wider bandwidth compared to the 3 X 3 optoelectronic switch presented earlier. The current switching implementation is also easier to package because it does not require the precise alignment to discrete fibers over the photodetectors for optical distribution. Fabrication details, circuit configuration, and performance for the 4 X 4 optoelectronic switch will be discussed in greater detail in these proceedings.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carlos Almeida, Francois L. Gouin, Lucie Robitaille, Claire L. Callender, and Julian P. Noad "High-speed 4x4 optoelectronic switch with on-chip optical signal distribution", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998);

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