Novel thin epi process for high-speed CB-CMOS

Vladimir F. Drobny; Kevin X. Bao

doi:10.1117/12.323986

4 September 1998 Novel thin epi process for high-speed CB-CMOS

Vladimir F. Drobny, Kevin X. Bao

Proceedings Volume 3506, Microelectronic Device Technology II; (1998) https://doi.org/10.1117/12.323986
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Matching NPN and PNP collector profiles for high-speed complementary bipolar technology presents a special challenge to epi processing. This paper describes a novel thin epi process that is designed to reduce the effect of boron autodoping and improve the NPN collector doping in the deep portion of the collector region. Summary evaluations of autodoping are presented for different H₂ bake and HCl etch cycles, and for the use of intrinsic- and As-doped cap layers. An epitaxial technique, which introduces As dopant during the high temperature H₂ bake, is described. This technique has proven very effective in suppressing the effects of boron autodoping and correcting the NPN collector profile.

Citation Download Citation

Vladimir F. Drobny and Kevin X. Bao "Novel thin epi process for high-speed CB-CMOS", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); https://doi.org/10.1117/12.323986

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