Real-time detection of chamber condition by observing the plasma spectrum intensity

Ching-Wen Cho; Yuan-Ko Hwang; Po-Tao Chu; Y. S. Peng; Chia-Hsiang Chen

doi:10.1117/12.324351

3 September 1998 Real-time detection of chamber condition by observing the plasma spectrum intensity

Ching-Wen Cho, Yuan-Ko Hwang, Po-Tao Chu, Y. S. Peng, Chia-Hsiang Chen

Proceedings Volume 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV; (1998) https://doi.org/10.1117/12.324351
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Chamber leakage, transfer shift and particle on lower electrode are the major causes of yield loss during plasma etch process. However, there is still no effective tool for real-time detecting these abnormal chamber conditions. The experiment result demonstrate that the plasma spectrum intensities are strongly correlated to the chamber conditions. One can real-time monitor the chamber conditions by comparing the plasma spectrum intensity with specific control rules. This paper provides an effective method to detect the chamber condition by observing the plasma spectrum intensity.

Citation Download Citation

Ching-Wen Cho, Yuan-Ko Hwang, Po-Tao Chu, Y. S. Peng, and Chia-Hsiang Chen "Real-time detection of chamber condition by observing the plasma spectrum intensity", Proc. SPIE 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, (3 September 1998); https://doi.org/10.1117/12.324351

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