Comparison study of lifetime measurement techniques

Gladys G. Quinones; Emily L. Allen

doi:10.1117/12.324401

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27 August 1998 Comparison study of lifetime measurement techniques

Gladys G. Quinones, Emily L. Allen

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Proceedings Volume 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II; (1998) https://doi.org/10.1117/12.324401
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

A comparison study was conducted between three different techniques used to resolve iron contamination in silicon. Fourteen 8-inch type Si wafers were implanted with iron at seven doses ranging from 1 by 10⁸ to 1 by 10¹² cm^-2. All 14 wafers including monitors were processed through an RTP chamber at 1100 degrees C for 6 min. Oxide thickness was measured on an ellipsometer. The wafers were measured by optical and thermal activation SPV, then the wafers were split in two sets. One set of seven wafers was measured by ELYMAT and the other set was measured by (mu) -PCD. Two different passivation techniques were used for (mu) -PCD, oxide and ethanol-iodine passivation. At low implant dose all three techniques have limitations. However (mu) -PCD shows the highest lifetime. At high Fe concentrations all three techniques tend to agree.

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Gladys G. Quinones and Emily L. Allen "Comparison study of lifetime measurement techniques", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); https://doi.org/10.1117/12.324401

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