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27 August 1998 Comparison study of lifetime measurement techniques
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Abstract
A comparison study was conducted between three different techniques used to resolve iron contamination in silicon. Fourteen 8-inch type Si wafers were implanted with iron at seven doses ranging from 1 by 108 to 1 by 1012 cm-2. All 14 wafers including monitors were processed through an RTP chamber at 1100 degrees C for 6 min. Oxide thickness was measured on an ellipsometer. The wafers were measured by optical and thermal activation SPV, then the wafers were split in two sets. One set of seven wafers was measured by ELYMAT and the other set was measured by (mu) -PCD. Two different passivation techniques were used for (mu) -PCD, oxide and ethanol-iodine passivation. At low implant dose all three techniques have limitations. However (mu) -PCD shows the highest lifetime. At high Fe concentrations all three techniques tend to agree.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gladys G. Quinones and Emily L. Allen "Comparison study of lifetime measurement techniques", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); https://doi.org/10.1117/12.324401
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