Microfabrication of membrane-based devices by HARSE and combined HARSE/wet etching

Ronald P. Manginell; Gregory C. Frye-Mason; W. Kent Schubert; Randy J. Shul; Christi Lober Willison

doi:10.1117/12.324310

31 August 1998 Microfabrication of membrane-based devices by HARSE and combined HARSE/wet etching

Ronald P. Manginell, Gregory C. Frye-Mason, W. Kent Schubert, Randy J. Shul, Christi Lober Willison

Proceedings Volume 3511, Micromachining and Microfabrication Process Technology IV; (1998) https://doi.org/10.1117/12.324310
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States

Abstract

Deep-reactive ion etching (DRIE) of silicon, also known as high-aspect-ratio silicon etching (HARSE), is distinguished by fast etch rates (approximately 3 micrometer/min), crystal orientation independence, anisotropy, vertical sidewall profiles and CMOS compatibility. By using through-wafer HARSE and stopping on a dielectric film placed on the opposite side of the wafer, freestanding dielectric membranes were produced. Dielectric membrane-based sensors and actuators fabricated in this way include microhotplates, flow sensors, valves and magnetically-actuated flexural plate wave (FPW) devices. Unfortunately, low-stress silicon nitride, a common membrane material, has an appreciable DRI etch rate. To overcome this problem HARSE can be followed by a brief wet chemical etch. This approach has been demonstrated using KOH or HF/Nitric/Acetic etchants, both of which have significantly smaller etch rates on silicon nitride than does DRIE. Composite membranes consisting of silicon dioxide and silicon nitride layers are also under evaluation due to the higher DRIE selectivity to silicon dioxide.

Citation Download Citation

Ronald P. Manginell, Gregory C. Frye-Mason, W. Kent Schubert, Randy J. Shul, and Christi Lober Willison "Microfabrication of membrane-based devices by HARSE and combined HARSE/wet etching", Proc. SPIE 3511, Micromachining and Microfabrication Process Technology IV, (31 August 1998); https://doi.org/10.1117/12.324310

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