Selective deep-Si-trench etching with dimensional control

Randy J. Shul; Christi Lober Willison; Lei Zhang

doi:10.1117/12.324308

31 August 1998 Selective deep-Si-trench etching with dimensional control

Randy J. Shul, Christi Lober Willison, Lei Zhang

Proceedings Volume 3511, Micromachining and Microfabrication Process Technology IV; (1998) https://doi.org/10.1117/12.324308
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States

Abstract

The recent development of a high-aspect ratio Si etch (HARSE) process has enabled the fabrication of a variety of Si structures where deep trench etching is necessary. The HARSE process relies on the formation of a sidewall etch inhibitor to prevent lateral etching of the Si structures during exposure to an aggressive SF₆/Ar plasma etch chemistry. The process yields highly anisotropic profiles with excellent dimensional control for high aspect ratio features. In this study, Si etch rates and etch selectivities to photoresist are reported as a function of chamber pressure, cathode rf-power, ICP source power, and gas flow. Si etch rates greater than 3 micrometer/min with etch selectivities to resist greater than 75:1 were obtained. Lateral dimensional control, etch selectivities to SiO₂ and Si₃N₄, and aspect ratio dependent etching (ARDE) will also be discussed.

Citation Download Citation

Randy J. Shul, Christi Lober Willison, and Lei Zhang "Selective deep-Si-trench etching with dimensional control", Proc. SPIE 3511, Micromachining and Microfabrication Process Technology IV, (31 August 1998); https://doi.org/10.1117/12.324308

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