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1 September 1998 Effects of semiconductor surface band pinning on scanning electrostatic force microscopy
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Proceedings Volume 3512, Materials and Device Characterization in Micromachining; (1998) https://doi.org/10.1117/12.324059
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States
Abstract
Scanning electrostatic force microscopy, along with a subset of this technique, scanning Kelvin probe microscopy, have been used to explore the materials composition and doping of semiconductor surfaces. Moreover, micromachined semiconductor probes are frequently used in SEFM, SKPM and scanning capacitance microscopy instruments in order to probe the nature of generic surfaces. Some work has been done to explore the electromechanical, and electrostatic nature of the probe- surface interaction for SEFM and SKPM. For instance, it has been demonstrated that band pinning at the semiconductor surface, caused by excessively large values of the ac voltage applied between the probe and substrate, creates a false null in an SKPM signal, masking the true nature of the surface. Recently, results of SEFM probes of semiconductor surfaces have been reported, which used large values of the ac voltage applied between the probe and the substrate. In this work, we demonstrate theoretically the effects of both large-signal behavior on the SEFM technique. We also demonstrate the effect of electric field penetration into a semiconductor surface or probe tip on the mechanical response of the probe. The results are compared to measurements, and set in the context of recent work wherein large-signal SEFM techniques are employed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Albert K. Henning "Effects of semiconductor surface band pinning on scanning electrostatic force microscopy", Proc. SPIE 3512, Materials and Device Characterization in Micromachining, (1 September 1998); https://doi.org/10.1117/12.324059
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