Stress measurement in MEMS using Raman spectroscopy

Sherwin T. Animoto; Dick J. Chang; Andra D. Birkitt

doi:10.1117/12.324091

1 September 1998 Stress measurement in MEMS using Raman spectroscopy

Sherwin T. Animoto, Dick J. Chang, Andra D. Birkitt

Proceedings Volume 3512, Materials and Device Characterization in Micromachining; (1998) https://doi.org/10.1117/12.324091
Event: Micromachining and Microfabrication, 1998, Santa Clara, CA, United States

Abstract

Raman spectroscopy is used as a non-contact method in measuring stresses at the surface of a crystalline structure or the crystalline-coated surface of an amorphous structure. The stress measurement capability is based on the relative frequency shift of Raman spectra when the crystal lattice is strained. The Raman spectroscopy has a resolution on the order of a few micrometer (micrometers ) which may be used to probe the local non-uniform stress distribution and thus address the material nonhomogeneity. This paper presents the Raman secular equation for general and cubic crystal systems and discusses the stress field effects to Raman frequency shifts and polarization. Experimental testing will include the calibration of the Raman signal versus mechanically applied stresses using single crystal strips, poly-silicon coatings deposited on different specimen configurations, and the stress measurements on a frequently used MEMS structure, cantilever beam, subject to electrostatic forces. Correlation of the experimental results with the analytical prediction will be addressed.

Citation Download Citation

Sherwin T. Animoto, Dick J. Chang, and Andra D. Birkitt "Stress measurement in MEMS using Raman spectroscopy", Proc. SPIE 3512, Materials and Device Characterization in Micromachining, (1 September 1998); https://doi.org/10.1117/12.324091

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