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18 December 1998 Compatibility of CD-SEM metrology with advanced e-beam resists
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There is an industry drive by the photomask manufacturers to produce reticles with tighter tolerances to satisfy the demand of the silicon wafer manufacturers. New processing and metrology techniques must be employed to attain these tighter specifications. This paper examines the feasibility of using low voltage CD-SEM metrology to gauge and optimize advanced e- beam resist processes. This paper presents SEM images, data and analysis of the metrology characterization results for ZEP and PBS e-beam resists. Strategies to minimize e-beam exposure dose during the measurement process will be discussed. Measurement precision and carry over effects will be presented and compared for both PBS and ZEP. This paper will demonstrate the suitability of using a CD-SEM in the metrology of developed ZEP resist, and show that an acceptable level of damage to the PBS resist can be attained.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Waiman Ng, Geoffrey T. Anderson, Suzanne Weaver, and Homer Y. Lem "Compatibility of CD-SEM metrology with advanced e-beam resists", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998);

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