Optical proximity correction for 0.15-um-rule memory devices

Haruo Iwasaki; Hiroyoshi Tanabe; Takashi Inoue; Yoshiyuki Tanaka

doi:10.1117/12.332838

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18 December 1998 Optical proximity correction for 0.15-μm-rule memory devices

Haruo Iwasaki, Hiroyoshi Tanabe, Takashi Inoue, Yoshiyuki Tanaka

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Proceedings Volume 3546, 18th Annual BACUS Symposium on Photomask Technology and Management; (1998) https://doi.org/10.1117/12.332838
Event: 18th Annual BACUS Symposium on Photomask Technology and Management, 1998, Redwood City, CA, United States

Abstract

Optical proximity correction (OPC) is applied to the cell patterns of 0.15-micrometer-rule memory devices. Two kinds of memory cell patterns are studied. The first is a wire pattern which has small gaps between two wires. The small gaps can be clearly resolved by using OPC such as jogs or resizing. The second pattern is a storage node pattern which has a rectangular shape. The area of the storage node is enlarged by using OPC such as resizing, hammer heads or serifs. These OPC masks are successfully fabricated by using dry etching process.

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Haruo Iwasaki, Hiroyoshi Tanabe, Takashi Inoue, and Yoshiyuki Tanaka "Optical proximity correction for 0.15-μm-rule memory devices", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); https://doi.org/10.1117/12.332838

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