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18 December 1998 TiSi-nitride attenuating phase-shift photomask for 193-nm lithography
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We have developed a new attenuating embedded phase-shift mask blank for 193 nm lithography based on novel TiSi-nitride chemistry. At 193 nm, these materials offer high optical transmission, they are radiation damage resistant, stable in common chemicals used to strip photoresist, process compatible with use of a hard Cr etch mask, and exhibit good dry etch selectivity to quartz. Specifically, optical transmissions of greater than 10% were achieved in films with 180 degree phase- shift. Irradiation at 6 mJ/cm2/pulse, or approximately 60x the energy densities in commercial steppers, caused small change in optical transmission for doses up to 2 kJ/cm2. Dry etching the films in an ICP reactor with CF4 gave a greater than 6:1 etch selectivity to quartz. Further, the novel wavelength-tunable structure of these TiSi-nitride films permits equally attractive phase-shift designs at 248 nm and longer wavelengths.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gillian A. M. Reynolds, Roger H. French, Peter F. Carcia, Charlie C. Torardi, Greg P. Hughes, David J. Jones, M. F. Lemon, M. H. Reilly, L. Wilson, and C. R. Miao "TiSi-nitride attenuating phase-shift photomask for 193-nm lithography", Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998);

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