1.55-um InGaAsP/InP partially gain-coupled distributed feedback laser/electroabsorption modulator integrated device for trunkline communication

Yi Luo; Guo-Peng Wen; Changzheng Sun; TongNing Li; Xin-Min Yang; Ren-Fan Wang; Cai-Lin Wang; Jin-Yan Jin

doi:10.1117/12.319593

19 August 1998 1.55-μm InGaAsP/InP partially gain-coupled distributed feedback laser/electroabsorption modulator integrated device for trunkline communication

Yi Luo, Guo-Peng Wen, Changzheng Sun, TongNing Li, Xin-Min Yang, Ren-Fan Wang, Cai-Lin Wang, Jin-Yan Jin

Author Affiliations +

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319593
Event: Photonics China '98, 1998, Beijing, China

Abstract

In this paper, a 1.55 micrometers InGaAsP/InP partially gain- coupled DFB laser monolithically integrated with electroabsorption modulator is fabricated for the first time. The threshold current and the extinction ratio are 40 mA and 11 dB respectively.

Citation Download Citation

Yi Luo, Guo-Peng Wen, Changzheng Sun, TongNing Li, Xin-Min Yang, Ren-Fan Wang, Cai-Lin Wang, and Jin-Yan Jin "1.55-μm InGaAsP/InP partially gain-coupled distributed feedback laser/electroabsorption modulator integrated device for trunkline communication", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319593

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