808-nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE

Xin Gao; Baoxue Bo; Yi Qu; Baoshun Zhang; Ling Wang; Yuxia Wang; Lixia Yang; Xiaowei Song; Xingde Zhang

doi:10.1117/12.319598

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19 August 1998 808-nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE

Xin Gao, Baoxue Bo, Yi Qu, Baoshun Zhang, Ling Wang, Yuxia Wang, Lixia Yang, Xiaowei Song, Xingde Zhang

Author Affiliations +

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319598
Event: Photonics China '98, 1998, Beijing, China

Abstract

In this work, we report Al-free InGaAsP/GaAs separate confinement heterostructure single quantum well structures for lasers emitting at 808 nm are grown by enhanced liquid phase epitaxy. The highest continuous wave output power is 4 W for lasers with coated facts. The differential efficiency is 1.32 W/A. The record characteristic T₀ of the laser is estimated to be about 218 K between 10 degree(s)C and 40 degree(s)C from the temperature dependence of the threshold current density J_th.

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Xin Gao, Baoxue Bo, Yi Qu, Baoshun Zhang, Ling Wang, Yuxia Wang, Lixia Yang, Xiaowei Song, and Xingde Zhang "808-nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319598

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