Translator Disclaimer
19 August 1998 808-nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE
Author Affiliations +
Proceedings Volume 3547, Semiconductor Lasers III; (1998)
Event: Photonics China '98, 1998, Beijing, China
In this work, we report Al-free InGaAsP/GaAs separate confinement heterostructure single quantum well structures for lasers emitting at 808 nm are grown by enhanced liquid phase epitaxy. The highest continuous wave output power is 4 W for lasers with coated facts. The differential efficiency is 1.32 W/A. The record characteristic T0 of the laser is estimated to be about 218 K between 10 degree(s)C and 40 degree(s)C from the temperature dependence of the threshold current density Jth.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin Gao, Baoxue Bo, Yi Qu, Baoshun Zhang, Ling Wang, Yuxia Wang, Lixia Yang, Xiaowei Song, and Xingde Zhang "808-nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998);

Back to Top