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19 August 1998 808-nm semiconductor laser Ohmic-contact technology
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Proceedings Volume 3547, Semiconductor Lasers III; (1998)
Event: Photonics China '98, 1998, Beijing, China
In order to enhance the conversion efficiency and output power of semiconductor lasers, extend its lifetime, the contact resistance has to be reduced. This paper introduces the recent results obtained about the semiconductor laser Ohmic contact experimental study. In our work, AuZn film was evaporated on to the P side of the laser epitaxial wafer, and AuGeNi on to N side. By choosing the optimum alloying temperature of 400 degree(s)C, we obtained the lowest contact resistance. After this process, AR and HR films were sputtered on to the two facets of the laser cavity. Finally, the following results were obtained for the laser performance: central wavelength (lambda) 0 equals 808 nm, threshold current density Jth equals 300 - 470 A/cm2, CW output power P equals 3W, resistance R equals 0.06 (Omega) (for a laser stripe of 150 micrometers , cavity length of 1 mm).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuxia Wang, Baoshun Zhang, Ling Wang, Dacui Ren, and Xingde Zhang "808-nm semiconductor laser Ohmic-contact technology", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998);

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