Paper
19 August 1998 Controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in planar microcavities
Hongdong Zhao, Guangdi Shen, Tao Yin, Changhua Chen, ZunTu Xu, Peng Lian, Guo Gao, ShiMing Lin
Author Affiliations +
Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319603
Event: Photonics China '98, 1998, Beijing, China
Abstract
Based on the cavity quantum electrodynamics, the controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in a planar micro-cavity has been studied. The spontaneous emission spectra are obtained for different mirror reflectivity and cavity length when the carrier density is fixed. The results show that the spontaneous emission intensity can be enhanced by increasing the mirror reflectivity when radiation wavelength is about two times of the cavity length. The spectra can be changed by the micro- cavity structure and the quantum well parameters.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongdong Zhao, Guangdi Shen, Tao Yin, Changhua Chen, ZunTu Xu, Peng Lian, Guo Gao, and ShiMing Lin "Controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in planar microcavities", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319603
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KEYWORDS
Quantum wells

Mirrors

Reflectivity

Chemical species

Semiconductor lasers

Optical microcavities

Quantum electrodynamics

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