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19 August 1998High-performance 155-μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
High performance uncooled 1.55 micrometers InGaAsP/InP strained layer quantum well lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5 mA and the highest lasing temperature of 122 degree(s)C were obtained.