High-performance 155-nm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

Xiaoyu Ma; Qing Cao; Shutang Wang; Liang Guo; Zhongming Wang; Liming Wang; Guangping He; Yali Yang; Hongqin Zhang; Xiuning Zhou; Lianhui Chen

doi:10.1117/12.319615

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19 August 1998 High-performance 155-μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

Xiaoyu Ma, Qing Cao, Shutang Wang, Liang Guo, Zhongming Wang, Liming Wang, Guangping He, Yali Yang, Hongqin Zhang, Xiuning Zhou, Lianhui Chen

Author Affiliations +

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319615
Event: Photonics China '98, 1998, Beijing, China

Abstract

High performance uncooled 1.55 micrometers InGaAsP/InP strained layer quantum well lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5 mA and the highest lasing temperature of 122 degree(s)C were obtained.

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Xiaoyu Ma, Qing Cao, Shutang Wang, Liang Guo, Zhongming Wang, Liming Wang, Guangping He, Yali Yang, Hongqin Zhang, Xiuning Zhou, and Lianhui Chen "High-performance 155-μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319615

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