Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers

Lijun Wang; Sheng Li Wu; Yun Liu; Yongqiang Ning; Jacqueline E. Diaz; Ivan Eliashevich; Hyuk Jong Yi; Manijeh Razeghi

doi:10.1117/12.319596

Translator Disclaimer

19 August 1998 Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers

Lijun Wang, Sheng Li Wu, Yun Liu, Yongqiang Ning, Jacqueline E. Diaz, Ivan Eliashevich, Hyuk Jong Yi, Manijeh Razeghi

Author Affiliations +

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319596
Event: Photonics China '98, 1998, Beijing, China

Abstract

980 nm GaInAs/GaAs/GaInP separate-confinement heterostructure single quantum well lasers are fabricated by LP-MOCVD. The lasers exhibit threshold current density of 170 A/cm², output light power 2W in continuous wave, slope efficiencies of 0.91 W/A without mirror coating. The characteristic temperature T₀ is 330 degree(s)K.

Citation Download Citation

Lijun Wang, Sheng Li Wu, Yun Liu, Yongqiang Ning, Jacqueline E. Diaz, Ivan Eliashevich, Hyuk Jong Yi, and Manijeh Razeghi "Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319596

ACCESS THE FULL ARTICLE