Novel photonic device structures by using thermal rapid annealing-induced disordering

Yi Luo; Zhi-Biao Hao; Changzheng Sun; Ai-Qing Jiang

doi:10.1117/12.319625

19 August 1998 Novel photonic device structures by using thermal rapid annealing-induced disordering

Yi Luo, Zhi-Biao Hao, Changzheng Sun, Ai-Qing Jiang

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319625
Event: Photonics China '98, 1998, Beijing, China

Abstract

Experimental results of disordering GaAlAs/GaAs MQW under different rapid thermal annealing (RTA) conditions are presented and discussed. Two kinds of novel device structures based on such technique are then proposed and fabricated. First, a laser diode with window regions for high power operation is designed and fabricated. The maximum output power of such a device shows an increase by 18% over laser diodes without window regions. Then a transverse mode controlled laser structure realized using RTA technique. A stable single transverse mode operation is obtained up to 4 times the threshold current.

Citation Download Citation

Yi Luo, Zhi-Biao Hao, Changzheng Sun, and Ai-Qing Jiang "Novel photonic device structures by using thermal rapid annealing-induced disordering", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319625

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