Paper
19 August 1998 Numerical simulation of the dynamic response of self-assembled In 0.4Ga0.6As/GaAs quantum dot lasers
Hongtao Jiang, Jasprit Singh
Author Affiliations +
Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319649
Event: Photonics China '98, 1998, Beijing, China
Abstract
Self-assembly effects in strained epitaxy have made it possible to grow high quality semiconductor dot structures. Recently several groups have shown good performance in quantum dot lasers. In particular for the In0.4Ga0.6As/GaAs quantum dot lasers differential gain of approximately 10-14 cm2 and modulation bandwidths of 7 - 8 GHz have been demonstrated. In this paper, we examine the electronic, optical and dynamic properties of self-assembled lasers. The formalism is based on an eight-band k.p model and a modified rate equations for quantum dots. A Monte-Carlo simulation is also done to compare with the rate equation results. Our results will focus on the following issues: (1) the role of cavity loss and quantum dot density in determining the position of the lasing peaks (i.e. whether ground state or excited state lasing with occur); (2) the dynamic response of quantum dot lasers and the gain compression factor due to Pauli exclusion principle.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongtao Jiang and Jasprit Singh "Numerical simulation of the dynamic response of self-assembled In 0.4Ga0.6As/GaAs quantum dot lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319649
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KEYWORDS
Quantum dots

Quantum dot lasers

Neodymium

Modulation

Quantum wells

Neon

Numerical simulations

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