Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

Dai Lun; Bei-Wei Zhang; Robin A. Mair; Kecai Zeng; Jing Yu Lin; Hongxing Jiang; Andrei Botchkarev; W. Kim; Hadis Morkoc; Muhammad Asif Khan

doi:10.1117/12.319607

19 August 1998 Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

Dai Lun, Bei-Wei Zhang, Robin A. Mair, Kecai Zeng, Jing Yu Lin, Hongxing Jiang, Andrei Botchkarev, W. Kim, Hadis Morkoc, Muhammad Asif Khan

Author Affiliations +

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319607
Event: Photonics China '98, 1998, Beijing, China

Abstract

Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 angstroms/50 angstroms GaN/Al_xGa_1-xN (x approximately 0.07) and 45 angstroms/45 angstroms In_xGa_1-xN/GaN (x approximately 0.15) multiple quantum well structures. Microdisks, approximately 9 micrometers in diameter and regularly spaced every 50 micrometers , were formed by ion beam etch process. Individual disk was pumped from 10 K to 300 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical properties of these microdisks have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. From cw PL emission spectra, optical modes corresponding to (1) the radial mode type with a spacing of 49 - 51 meV (both TE and TM) and (2) the Whispering gallery mode with a spacing of 15 - 16 meV were observed in the GaN-based microdisk cavities. The spacings of these modes are consistent with theoretical calculation. The implications of our results to III-Nitride microdisk lasers are discussed.

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Dai Lun, Bei-Wei Zhang, Robin A. Mair, Kecai Zeng, Jing Yu Lin, Hongxing Jiang, Andrei Botchkarev, W. Kim, Hadis Morkoc, and Muhammad Asif Khan "Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319607

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