Using ray method to study three-electrode semiconductor lasers

Hongxia Sun; Hongchang Lu

doi:10.1117/12.319627

19 August 1998 Using ray method to study three-electrode semiconductor lasers

Hongxia Sun, Hongchang Lu

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319627
Event: Photonics China '98, 1998, Beijing, China

Abstract

Three-section semiconductor lasers are studied based on the ray method. An analytic expression of output power for the three-section semiconductor laser is derived. From this expression, threshold condition is also obtained. The relation between three-electrode semiconductor lasers and two-electrode semiconductor lasers is discussed.

Citation Download Citation

Hongxia Sun and Hongchang Lu "Using ray method to study three-electrode semiconductor lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319627

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