Analysis and simulation of the performances of Si/SiGe HBTs and monolithic integrated preamplifiers of photoreceivers

Lixin Zhao; Chen Xu; Guo Gao; Deshu Zou; Jianxing Chen; Guangdi Shen

doi:10.1117/12.317970

12 August 1998 Analysis and simulation of the performances of Si/SiGe HBTs and monolithic integrated preamplifiers of photoreceivers

Lixin Zhao, Chen Xu, Guo Gao, Deshu Zou, Jianxing Chen, Guangdi Shen

Author Affiliations +

Proceedings Volume 3551, Integrated Optoelectronics II; (1998) https://doi.org/10.1117/12.317970
Event: Photonics China '98, 1998, Beijing, China

Abstract

In this paper, we analyzed the characteristics of the noise, current gain, frequency performance and dynamic range of Si/SiGe heterojunction bipolar transistors (Si/SiGe HBTs) for photoreceivers. They are influenced by the following factors: (1) the doping density, the thickness of the high doped and low doped layers of the emitter, (2) recombination currents in the interface of the emitter-base heterojunction, (3) the germanium (Ge) and Boron (B) content and profile in base region, (4) the collector-base heterojunction barrier effect. Then we gave the device analysis model, noise analysis model and their equivalent circuits of the Si/SiGe HBTs, for simulating and optimizing the performance of Si/SiGe HBTs used in photoreceivers. A novel Si/SiGe HBTs of preamplifiers for photoreceivers has been designed and fabricated. Its current gain (beta) _max equals 300, the cut off frequency f_T equals 10 GHz and the maximum oscillation frequency f_MAX equals 5 GHz. Based on this, we analyzed, simulated and optimized the performances of the preamplifiers of photoreceivers, include the sensitivity, the dynamic range, the transimpedance characteristics, frequency response, and bit rate of the transimpedance preamplifiers of photoreceivers composed of SiGe HBTs, and optimized the design of SiGe HBTs- based monolithic integrated preamplifiers of photoreceivers.

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Lixin Zhao, Chen Xu, Guo Gao, Deshu Zou, Jianxing Chen, and Guangdi Shen "Analysis and simulation of the performances of Si/SiGe HBTs and monolithic integrated preamplifiers of photoreceivers", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); https://doi.org/10.1117/12.317970

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KEYWORDS

Resistance

Capacitance

Receivers

Quantum wells

Silicon

Avalanche photodetectors

Doping

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