Design of 4x4 GaAs-GaAlAs carrier-injected total internal reflect optical switch array

Ruimin Yin; Jianyi Yang; Qiang Zhou; Minghua Wang

doi:10.1117/12.317973

12 August 1998 Design of 4x4 GaAs-GaAlAs carrier-injected total internal reflect optical switch array

Ruimin Yin, Jianyi Yang, Qiang Zhou, Minghua Wang

Proceedings Volume 3551, Integrated Optoelectronics II; (1998) https://doi.org/10.1117/12.317973
Event: Photonics China '98, 1998, Beijing, China

Abstract

A new scheme of GaAs-GaAlAs total-internal-reflect (TIR) optical switch unit based on bandfilling effect is presented in this paper. Asymmetric Y-branch, which is the essential part of switch structure, is analyzed using beam propagate method (BPM) on three different conditions: index change due to injection, width of injection region and position of injection edge. Unit with two perpendicular output ports is designed according to the numerical results to realized small sized 4 X 4 array which can easily couple with fibers and quickly give off heat.

Citation Download Citation

Ruimin Yin, Jianyi Yang, Qiang Zhou, and Minghua Wang "Design of 4x4 GaAs-GaAlAs carrier-injected total internal reflect optical switch array", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); https://doi.org/10.1117/12.317973

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