Growth factor of Fe-doped semi-insulating InP by LP-MOCVD

Xuejin Yan; Hongliang Zhu; Wei Wang; Guoyang Xu; Fan Zhou; Chaohua Ma; Xiaojie Wang; Huijiang Tian; Jingyuan Zhang; Rong Han Wu; Qiming Wang

doi:10.1117/12.317966

12 August 1998 Growth factor of Fe-doped semi-insulating InP by LP-MOCVD

Xuejin Yan, Hongliang Zhu, Wei Wang, Guoyang Xu, Fan Zhou, Chaohua Ma, Xiaojie Wang, Huijiang Tian, Jingyuan Zhang, Rong Han Wu, Qiming Wang

Author Affiliations +

Proceedings Volume 3551, Integrated Optoelectronics II; (1998) https://doi.org/10.1117/12.317966
Event: Photonics China '98, 1998, Beijing, China

Abstract

The semi-insulating InP has been grown using ferrocene as a dopant source by low pressure MOCVD. Fe doped semi-insulating InP material whose resistivity is equal to 2.0 X 10⁸(Omega) *cm and the breakdown field is greater than 4.0 X 10⁴Vcm^-1 has been achieved. It is found that the magnitude of resistivity increases with growing pressure enhancement under keeping TMIn, PH₃, ferrocene [Fe(C₅H₅)₂] flow constant at 620 degrees Celsius growth temperature. Moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. It is estimated that active Fe doping efficiency, (eta) , is equal to 8.7 X 10^-4 at 20 mbar growth pressure and 620 degrees Celsius growth temperature by the comparison of calculated and experimental results.

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Xuejin Yan, Hongliang Zhu, Wei Wang, Guoyang Xu, Fan Zhou, Chaohua Ma, Xiaojie Wang, Huijiang Tian, Jingyuan Zhang, Rong Han Wu, and Qiming Wang "Growth factor of Fe-doped semi-insulating InP by LP-MOCVD", Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); https://doi.org/10.1117/12.317966

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