Effect of gamma irradiation on room-temperature SWIR HgCdTe photodiodes

Xinwen Hu; Xiangyang Li; Huiqin Lu; Jun Zhao; Haimei Gong; Jiaxiong Fang

doi:10.1117/12.318060

11 August 1998 Effect of gamma irradiation on room-temperature SWIR HgCdTe photodiodes

Xinwen Hu, Xiangyang Li, Huiqin Lu, Jun Zhao, Haimei Gong, Jiaxiong Fang

Proceedings Volume 3553, Detectors, Focal Plane Arrays, and Imaging Devices II; (1998) https://doi.org/10.1117/12.318060
Event: Photonics China '98, 1998, Beijing, China

Abstract

Planar n⁺-on-p SWIR Hg_1-xCd_xTe(x equals 0.577 approximately 0.669) photodiodes passivated with ZnS were irradiated by Co⁶⁰ gamma source. The room temperature current-voltage characteristics of the photodiodes were carried out following the irradiation. And response spectrum, capacitance-voltage and noise spectrum of the devices were measured respectively before and after 1.0Mrads gamma irradiation. The results are found that the RT SWIR HgCdTe photodiodes are extremely hard to gamma irradiation with no perceivable deterioration in the device performance even upon irradiation of up to 1.0Mrads.

Citation Download Citation

Xinwen Hu, Xiangyang Li, Huiqin Lu, Jun Zhao, Haimei Gong, and Jiaxiong Fang "Effect of gamma irradiation on room-temperature SWIR HgCdTe photodiodes", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); https://doi.org/10.1117/12.318060

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