Si homojunction internal photoemission far-infrared detectors

A. G. Unil Perera; W. Z. Shen; Hui Chun Liu; Margaret Buchanan; Michael A. Tanner; Kang Lung Wang

doi:10.1117/12.318097

11 August 1998 Si homojunction internal photoemission far-infrared detectors

A. G. Unil Perera, W. Z. Shen, Hui Chun Liu, Margaret Buchanan, Michael A. Tanner, Kang Lung Wang

Proceedings Volume 3553, Detectors, Focal Plane Arrays, and Imaging Devices II; (1998) https://doi.org/10.1117/12.318097
Event: Photonics China '98, 1998, Beijing, China

Abstract

A novel 48 micrometers cutoff wavelength ((lambda) _c) Si far-IR (FIR) detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.3 +/- 0.1 A/W at 27.5 micrometers and detectivity D* of 6.6 X 10¹⁰ cm (root) Hz/W at 4.2 K. The (lambda) _c and bias dependent quantum efficiency agree well with theory. Based on the experimental results and the model, Si FIR detectors with high performance and tailorable (lambda) _cs can be realized using higher emitter layer doping concentrations.

Citation Download Citation

A. G. Unil Perera, W. Z. Shen, Hui Chun Liu, Margaret Buchanan, Michael A. Tanner, and Kang Lung Wang "Si homojunction internal photoemission far-infrared detectors", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); https://doi.org/10.1117/12.318097

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KEYWORDS

Sensors

Silicon

Doping

Far infrared

Quantum efficiency

Absorption

Performance modeling

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