Carrier tunneling in ZnCdSe/ZnSe asymmetric double-quantum-well structure

Guangyou Yu; Xiwu Fan; Jiying Zhang; Baojun Yang; Xiaowei Zhao; Dezheng Shen; Xianggui Kong

doi:10.1117/12.318247

14 August 1998 Carrier tunneling in ZnCdSe/ZnSe asymmetric double-quantum-well structure

Guangyou Yu, Xiwu Fan, Jiying Zhang, Baojun Yang, Xiaowei Zhao, Dezheng Shen, Xianggui Kong

Proceedings Volume 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II; (1998) https://doi.org/10.1117/12.318247
Event: Photonics China '98, 1998, Beijing, China

Abstract

Optical characteristics of ZnCdSe/ZnSe asymmetric double- quantum-well structure grown by LP-MOCVD were studied. By analyzing the photoluminescence spectra, we found that the excitation power and temperature could influence the tunneling of the excitons, and due to different tunneling time of electrons and holes, space-charge effect was observed.

Citation Download Citation

Guangyou Yu, Xiwu Fan, Jiying Zhang, Baojun Yang, Xiaowei Zhao, Dezheng Shen, and Xianggui Kong "Carrier tunneling in ZnCdSe/ZnSe asymmetric double-quantum-well structure", Proc. SPIE 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II, (14 August 1998); https://doi.org/10.1117/12.318247

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