Spectroellipsometric study of optical and electrical properties of buried CoSi2 layers in silicon produced by MEVVA implantation

Wensheng Guo; Saipeng Wong; Ziqing Zhu

doi:10.1117/12.318354

10 August 1998 Spectroellipsometric study of optical and electrical properties of buried CoSi2 layers in silicon produced by MEVVA implantation

Wensheng Guo, Saipeng Wong, Ziqing Zhu

Author Affiliations +

Proceedings Volume 3558, Automated Optical Inspection for Industry: Theory, Technology, and Applications II; (1998) https://doi.org/10.1117/12.318354
Event: Photonics China '98, 1998, Beijing, China

Abstract

Cobalt ion implantation of silicon substrate by Metal Vapor Vacuum Arc ion source has been studied by spectroscopic ellipsometry (SE) over the wavelength range of 400-2000nm. A series of annealed samples with different substrate temperatures during implantation have been investigated. From the interpretation of the ellipsometric data, the depth profiles of the samples can be derived. And the derived layer thicknesses are found to be consistent with the results of RBS and XTEM studies. At the same time, the optical properties of the buried CoSi₂ layers in Si can be derived. To represent the optical properties of these buried CoSi₂ layers, a three-term model is used with two classical Lorentz oscillators representing the electronic transitions, and one Drude term modeling the effect of free electrons. The derived Drude parameters can be used to calculate the optical resistivities of these buried CoSi₂ layers. And the calculated optical resistivities are consistent with the dc electrical resistivities deduced from electrical measurements.

Citation Download Citation

Wensheng Guo, Saipeng Wong, and Ziqing Zhu "Spectroellipsometric study of optical and electrical properties of buried CoSi2 layers in silicon produced by MEVVA implantation", Proc. SPIE 3558, Automated Optical Inspection for Industry: Theory, Technology, and Applications II, (10 August 1998); https://doi.org/10.1117/12.318354

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