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6 July 1999 PZT thin films grown by laser ablation
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Proceedings Volume 3572, 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications; (1999) https://doi.org/10.1117/12.358344
Event: 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications, 1998, Cartagena de Indias, Colombia
Abstract
PZT thin films were deposited by laser ablation at high vacuum and at room temperature. After that, some of the samples were annealed at air in the temperature range 450 degree(s)C - 550 degree(s)C. The samples were characterized by XPS and X-ray diffraction. A decrease in the oxygen composition of the as-deposited sample was observed. In the as-deposited film metallic lead (Pb) appeared. The as-deposited analyzed film showed a weak crystallization. A posterior annealing of the as-grown films improved their crystalline structure. This annealing treatment provoked the disappearance of the metallic Pb bonds in the films.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tupac Garcia, E. de Posada, Ernesto Jimenez, F. Calderon, Pascual Bartolo-Perez, and J. L. Pena "PZT thin films grown by laser ablation", Proc. SPIE 3572, 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications, (6 July 1999); https://doi.org/10.1117/12.358344
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