Nickel deposition on silicon surfaces

Cs. Beleznai; Laszlo Nanai; Seppo Leppaevuori; Janne Remes; Hannu Moilanen; Thomas F. George

doi:10.1117/12.320989

19 August 1998 Nickel deposition on silicon surfaces

Cs. Beleznai, Laszlo Nanai, Seppo Leppaevuori, Janne Remes, Hannu Moilanen, Thomas F. George

Proceedings Volume 3573, OPTIKA '98: 5th Congress on Modern Optics; (1998) https://doi.org/10.1117/12.320989
Event: OPTIKA '98: Fifth Congress on Modern Optics, 1998, Budapest, Hungary

Abstract

Experimental results of laser assisted chemical vapor deposition of nickel from Ni(CO)₄ and theoretical treatment of deposition process are presented. The nickel deposition has ben realized by scanning of Ar⁺ laser beam (100 - 400 mW, (lambda) equals 515 nm and 488 nm) on Si surfaces in atmosphere of Ni(CO)₄ with 0.2 - 2.0 mbars with scanning speeds of 20 - 700 micrometers /s. As a result homogeneous Ni lines on Si have been deposited with a typical volumetric growth rate of 250 micrometers ³/s and widths of 10 - 20 micrometers and thickness of 0.2 - 0.5 micrometers . The electrical resistivity of lines deposited was cca 7 (mu) (Omega) cm. The theoretical treatment includes computations of the temperature distribution in both gas- phase and solid substrate. The reaction rate is computed on base of local concentration and local temperatures, within the frame of finite element methods using triangles as a base of computing.

Citation Download Citation

Cs. Beleznai, Laszlo Nanai, Seppo Leppaevuori, Janne Remes, Hannu Moilanen, and Thomas F. George "Nickel deposition on silicon surfaces", Proc. SPIE 3573, OPTIKA '98: 5th Congress on Modern Optics, (19 August 1998); https://doi.org/10.1117/12.320989

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