Steady-state and transient defect populations in KH2PO4 subsequent to high-fluence laser irradiation

Stavros G. Demos; Michael C. Staggs; Harry B. Radousky; James J. De Yoreo

doi:10.1117/12.349237

26 May 1999 Steady-state and transient defect populations in KH₂PO₄ subsequent to high-fluence laser irradiation

Stavros G. Demos, Michael C. Staggs, Harry B. Radousky, James J. De Yoreo

Proceedings Volume 3610, Laser Material Crystal Growth and Nonlinear Materials and Devices; (1999) https://doi.org/10.1117/12.349237
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Microscopic fluorescence imaging and time-resolved Raman scattering are employed to investigate the effect of high power 355 nm laser irradiation on preexisting and transient defect populations in KH₂PO₄. Defect clusters in the bulk of KDP crystals are imaged with 1 micron spatial resolution using their NIR emission. The intensity of the emission clusters varies widely within the image field. The exposure of the crystal at high power 355 nm, 3 ns laser irradiation leads to a reduction of the number of observed optically active centers. In addition, time resolved Raman scattering was employed to study the transient generation of defects during high power 355 nm laser irradiation.

Citation Download Citation

Stavros G. Demos, Michael C. Staggs, Harry B. Radousky, and James J. De Yoreo "Steady-state and transient defect populations in KH₂PO₄ subsequent to high-fluence laser irradiation", Proc. SPIE 3610, Laser Material Crystal Growth and Nonlinear Materials and Devices, (26 May 1999); https://doi.org/10.1117/12.349237

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