Interferometric lithography for nanoscale fabrication

Saleem H. Zaidi; Steven R. J. Brueck

doi:10.1117/12.352681

15 July 1999 Interferometric lithography for nanoscale fabrication

Saleem H. Zaidi, Steven R. J. Brueck

Proceedings Volume 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV; (1999) https://doi.org/10.1117/12.352681
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with feature resolution to approximately 50 nm. Combining IL with anisotropic etching and with 3D oxidation techniques provides a suite of techniques that accesses a broad range of Si nanostructures over large areas and wit good uniformity. Optical characterization includes measurements of reflectivity for a wide range of 1D grating profiles, and Raman scattering characterization of Si nanostructures. Three regimes are found for the Raman scattering: bulk, resonant enhanced and asymmetry and splitting.

Citation Download Citation

Saleem H. Zaidi and Steven R. J. Brueck "Interferometric lithography for nanoscale fabrication", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); https://doi.org/10.1117/12.352681

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