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15 July 1999 Laser-induced electronic bond breaking and structural changes on semiconductor surfaces
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We review the bond breaking and structural changes on clean surfaces of Si(111)-(7X7) and of InP(110)-(1X1) induced by ns- and fs-laser irradiation with fluences below thresholds of melting and ablation. Atomic imaging of the irradiated surface by scanning tunneling microscopy (STM) has shown that the bond breaking of adatoms of Si(111)- (7X7) is induced by an electronic process to form adatom vacancies mostly at individual adatom sites. Si atoms in the electronic ground state are desorbed with a peak translational energy of 0.06 eV, as a direct consequence of the bond breaking. On the other hand, STM images of the irradiated InP(110)-(1X1) surfaces have revealed the preferential removal of the top-most P atoms, with significant formation yields of vacancy strings consisting of several adjacent vacancies on the quasi-one dimensional P rows. The isolated In vacancies are also formed, but with a much smaller yield. For both surfaces, bond breaking takes place at intrinsic sites of the surface structures, and the efficiency is strongly site-sensitive, resonantly wavelength-dependent, and highly super-linear with respect to the excitation intensity. The electronic bond breaking is shown originate from non-linear localization of excited species in surface electronic states.
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Katsumi Tanimura and Jun'ichi Kanasaki "Laser-induced electronic bond breaking and structural changes on semiconductor surfaces", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999);

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