Lattice strain in excimer-laser-crystallized poly-Si thin films

Hiroshi Okumura; Akio Tanikawa; Kenji Sera; Fujio Okumura

doi:10.1117/12.352694

15 July 1999 Lattice strain in excimer-laser-crystallized poly-Si thin films

Hiroshi Okumura, Akio Tanikawa, Kenji Sera, Fujio Okumura

Proceedings Volume 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV; (1999) https://doi.org/10.1117/12.352694
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

The lattice strain in excimer laser crystallized polycrystalline Si thin films reflects the grain growth induced by the laser irradiation. In this report, the measurement of the lattice strain is made by using the energy-dispersive grazing-incidence x-ray diffraction with synchrotron radiation. The excimer laser crystallized poly- Si thin films show tensile lattice strain in the directions parallel to the substrate surface. The strain increases from 2.2 X 10^-3 to 5.0 X 10^-3 when the grain size increase from 40 to 200 nm. The strain is anisotropic between the strain and the strain in the layer near the substrate interface when the grain size is small. Carrier mobility in a thin film transistor tends to increase when the strain increases and the anisotropy decreases.

Citation Download Citation

Hiroshi Okumura, Akio Tanikawa, Kenji Sera, and Fujio Okumura "Lattice strain in excimer-laser-crystallized poly-Si thin films", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); https://doi.org/10.1117/12.352694

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