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15 July 1999 Microstructuring with 157-nm laser light
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Abstract
The use of fluorine (F2) lasers, emitting at 157 nm, offers new possibilities for key applications demanding very high resolution and/or higher photon energy to expand the laser-processable material spectrum. Promising results have been achieved using F2 lasers at 157 nm for micromachining of various materials that are very difficult to process at other laser wavelengths. This paper reports about new F2 laser source developments and their efficiency in processing Teflon/Polytetrafluoroethylene and fused silica under moderate, uniform illumination conditions. Ablation rates and threshold parameters have been investigated. Scanning electron micrographs of the produced microstructures are presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heinrich Endert, Michael Kauf, Eric E. Mayer, Michael J. Scaggs, John H. Fair, and Dirk Basting "Microstructuring with 157-nm laser light", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); https://doi.org/10.1117/12.352726
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