Transient temperature measurement of amorphous silicon thin films during excimer laser annealing

Seung-Jae Moon; Ming-Hong Lee; Mutsuko Hatano; Kenkichi Suzuki; Constantine P. Grigoropoulos

doi:10.1117/12.352692

15 July 1999 Transient temperature measurement of amorphous silicon thin films during excimer laser annealing

Seung-Jae Moon, Ming-Hong Lee, Mutsuko Hatano, Kenkichi Suzuki, Constantine P. Grigoropoulos

Proceedings Volume 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV; (1999) https://doi.org/10.1117/12.352692
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

The excimer laser annealing of amorphous silicon thin films has been investigated via optical diagnostics. Amorphous silicon films of 50 nm thickness are used in laser annealing. To obtain the transient temperature variation in the laser annealing process, the thermal emission and near- IR optical properties are measured. The front transmissivity and reflectivity are measured to obtain the emissivity at the 1.52 micrometers wavelength of the probe IRHeNe laser. Significant undercooling of the liquid silicon is observed during the cooling stage. The emissivity is almost constants during the melting period, but increases during the melting and solidification transformations.

Citation Download Citation

Seung-Jae Moon, Ming-Hong Lee, Mutsuko Hatano, Kenkichi Suzuki, and Constantine P. Grigoropoulos "Transient temperature measurement of amorphous silicon thin films during excimer laser annealing", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); https://doi.org/10.1117/12.352692

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