UV laser ablation of ultrathin dielectric layers

Katharina Rubahn; Juergen Ihlemann; Frank Balzer; Horst-Guenter Rubahn

doi:10.1117/12.352698

15 July 1999 UV laser ablation of ultrathin dielectric layers

Katharina Rubahn, Juergen Ihlemann, Frank Balzer, Horst-Guenter Rubahn

Proceedings Volume 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV; (1999) https://doi.org/10.1117/12.352698
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Ablation yields and thresholds for 193 nm UV laser ablation of ultrathin HfO₂ are presented. The single shot threshold fluence increases approximately linearly with HfO₂ thickness form 28 nm to 120 nm. Due to the logarithmic dependence of ablation depth on fluence this result with increasing layer thickness in an exponential increase of fluence necessary for clean ablation of the whole layer. The observed ablation depth for fixed HfO₂ thickness can be reproduced phenomenologically by taking ablation from the HfO₂ film as well as the quartz substrate into account. As a first approach to a quantitative understanding we calculate numerically the heat evolution in the layered system and identificate ablation with the onset of melting of the absorbing layer. Whereas the ablation curve for a 74 nm thick film can be reproduced that way, this is not the case for the case for the overall thickness dependence of the ablation threshold. This points to possible finite size effects for the phonon-phonon scattering rate in the thin dielectric layers.

Citation Download Citation

Katharina Rubahn, Juergen Ihlemann, Frank Balzer, and Horst-Guenter Rubahn "UV laser ablation of ultrathin dielectric layers", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); https://doi.org/10.1117/12.352698

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