Solid-source molecular beam epitaxy growth and characteristics of resonant cavity light-emitting diodes

Mika J. Saarinen; Seppo Orsila; Mika Toivonen; Pekka Savolainen; Tiina E. Kuuslahti; Ville Vilokkinen; Petri Melanen; Pekko Sipilae; Markus Pessa

doi:10.1117/12.344482

14 April 1999 Solid-source molecular beam epitaxy growth and characteristics of resonant cavity light-emitting diodes

Mika J. Saarinen, Seppo Orsila, Mika Toivonen, Pekka Savolainen, Tiina E. Kuuslahti, Ville Vilokkinen, Petri Melanen, Pekko Sipilae, Markus Pessa

Author Affiliations +

Proceedings Volume 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III; (1999) https://doi.org/10.1117/12.344482
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We report on resonant cavity light-emitting diodes, operating at 660, 880, and 1300 nm wavelengths. Some of the characteristic features of these devices will be discussed. The devices were grown by all-solid-source molecular beam epitaxy (SSMBE). The results provide clear-cut evidence that SSMBE is a viable method to growth of phosphorous containing semiconductors.

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Mika J. Saarinen, Seppo Orsila, Mika Toivonen, Pekka Savolainen, Tiina E. Kuuslahti, Ville Vilokkinen, Petri Melanen, Pekko Sipilae, and Markus Pessa "Solid-source molecular beam epitaxy growth and characteristics of resonant cavity light-emitting diodes", Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); https://doi.org/10.1117/12.344482

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